Silicon N-Channel Power MOSFET
CS90N03 B3
○R
General Description：
CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD(TC=25℃) RDS(ON)Typ
25 90 80 4.
8
switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit
for system miniaturization and higher efficiency.
The
package form is TO-251, which accords with the RoHS
standard.
Features：
l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test
Appl...