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CS90N03B4

Huajing Microelectronics
Part Number CS90N03B4
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS90N03 B4 ○R General Description： CS90N03 B4, the silicon N-channel Enhanced VDMOSFETs...
Datasheet PDF File CS90N03B4 PDF File

CS90N03B4
CS90N03B4

Overview
Silicon N-Channel Power MOSFET CS90N03 B4 ○R General Description： CS90N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 25 90 80 4.
8 switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the RoHS standard.
Features： l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test Applications： Automotive,DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID I D a1 M VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100...


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