Silicon N-Channel Power MOSFET
CS3410 B3
○R
General Description：
CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy.
The
transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.
1Ω)
l Low Gate Charge (Typical Data:20nC) l Low Reverse transfer capacitances(Typical:100PF) l 100% Single Pulse avalanche energy Test
Applications：
Circuit of switching DC/DC converters and ...