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CS3410B3

Huajing Microelectronics
Part Number CS3410B3
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS3410 B3 ○R General Description： CS3410 B3, the silicon N-channel Enhanced VDMOSFETs,...
Datasheet PDF File CS3410B3 PDF File

CS3410B3
CS3410B3

Overview
Silicon N-Channel Power MOSFET CS3410 B3 ○R General Description： CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤0.
1Ω) l Low Gate Charge (Typical Data:20nC) l Low Reverse transfer capacitances(Typical:100PF) l 100% Single Pulse avalanche energy Test Applications： Circuit of switching DC/DC converters and DC motor control.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage S...


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