Silicon N-Channel Power MOSFET
CS6N60 A8H
○R
General Description：
CS6N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 6 85 1.
4
performance and enhance the avalanche energy.
The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤1.
7Ω) l Low Gate Charge (Typical Data: 19.
5nC) l Low Reverse transfer capacitances(Typical: 7.
5pF) l 100% Single Pulse avalanche energy Test
Applica...