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CS6N60A8H

Huajing Microelectronics
Part Number CS6N60A8H
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS6N60 A8H ○R General Description： CS6N60 A8H, the silicon N-channel Enhanced VDMOSFETs...
Datasheet PDF File CS6N60A8H PDF File

CS6N60A8H
CS6N60A8H

Overview
Silicon N-Channel Power MOSFET CS6N60 A8H ○R General Description： CS6N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 85 1.
4 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤1.
7Ω) l Low Gate Charge (Typical Data: 19.
5nC) l Low Reverse transfer capacitances(Typical: 7.
5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C ...


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