Silicon N-Channel Power MOSFET
CS8N25 A8H
○R
General Description:
CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
250 8 83 0.
4
the avalanche energy.
The
transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency.
The package form is TO-220AB, which accords
with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤0.
47Ω) l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications...