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CS8N25A8H

Huajing Microelectronics
Part Number CS8N25A8H
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS8N25 A8H ○R General Description： CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs...
Datasheet PDF File CS8N25A8H PDF File

CS8N25A8H
CS8N25A8H

Overview
Silicon N-Channel Power MOSFET CS8N25 A8H ○R General Description： CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 250 8 83 0.
4 the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤0.
47Ω) l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °...


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