Part Number
|
BT15N60A9F |
Manufacturer
|
Huajing Microelectronics |
Description
|
Silicon FS Planar IGBT |
Published
|
Dec 6, 2016 |
Detailed Description
|
Silicon FS Planar IGBT
BT15N60A9F
○R
General Description:
Using HUAJING's proprietary Planar design and advanced FS te...
|
Datasheet
|
BT15N60A9F
|
Overview
Silicon FS Planar IGBT
BT15N60A9F
○R
General Description:
Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot TC=25℃)
VCE(SAT)
600 15 25 2.
1
V A W V
Features:
l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
1V
@ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability
Applications:
Aircondition、Welding、UPS…
Absolute Maximum Ratings
(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
Collector Current
I...
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