Part Number
|
BT15N120ANF |
Manufacturer
|
Huajing Microelectronics |
Description
|
Silicon FS Planar IGBT |
Published
|
Dec 6, 2016 |
Detailed Description
|
Silicon FS Planar IGBT
BT15N120ANF
○R
General Description:
Using HUAJING's proprietary trench design and advanced FS(f...
|
Datasheet
|
BT15N120ANF
|
Overview
Silicon FS Planar IGBT
BT15N120ANF
○R
General Description:
Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.
VCES IC Ptot (TC=25℃)
VCE(SAT)
1200 25 186 2.
2
V A W V
Features:
l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
2V
@ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability
Applications:
Power switch circuit of induction cooker(IH).
Absolute Maximum Ratings
(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
IC...
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