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BT15N120ANF

Part Number	BT15N120ANF
Manufacturer	Huajing Microelectronics
Description	Silicon FS Planar IGBT
Published	Dec 6, 2016
Detailed Description	Silicon FS Planar IGBT BT15N120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(f...
Datasheet	BT15N120ANF PDF File

Overview

Silicon FS Planar IGBT BT15N120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.
VCES IC Ptot （TC=25℃） VCE(SAT) 1200 25 186 2.
2 V A W V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
2V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH).
Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC...

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BT15N120ANF Silicon FS Planar IGBT - Huajing Microelectronics

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