|
Part Number
|
HFP17N10 |
|
Manufacturer
|
HUASHAN ELECTRONIC |
|
Description
|
N-Channel Enhancement Mode Field Effect Transistor |
|
Published
|
Dec 7, 2016 |
|
Datasheet
|
HFP17N10
|
Features
• 17A, 100V, RDS(on) 70mΩ@VGS = 10 V
• High density cell design for ultra low Rdson
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-220 1- G 2- D 3- S
Tstg——Storage Tempe...
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