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HFP17N10

HUASHAN ELECTRONIC
Part Number HFP17N10
Manufacturer HUASHAN ELECTRONIC
Description N-Channel Enhancement Mode Field Effect Transistor
Published Dec 7, 2016
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. HFP17N10 N-Channel Enhancement Mode Field Effect Transistor █ General Des...
Datasheet PDF File HFP17N10 PDF File

HFP17N10
HFP17N10

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
HFP17N10 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
█ Features • 17A, 100V, RDS(on) <70mΩ@VGS = 10 V • High density cell design for ultra low Rdson • Fast switching • 100% avalanche tested • Improved dv/dt capability █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-220 1- G 2- D 3- S Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Temperat...


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