OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Monolithic integrated
Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.
5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
BSC018NE2LSI
Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V)
25 V 1.
8 mW 100 A 23 nC 36 nC
PG-TDSON-8
Type BSC018NE2LSI
Package PG-TDSON-8
Marking 018NE2LI
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, ...