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BSC018NE2LS

Infineon
Part Number BSC018NE2LS
Manufacturer Infineon
Description Power MOSFET
Published Dec 9, 2016
Detailed Description OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS...
Datasheet PDF File BSC018NE2LS PDF File

BSC018NE2LS
BSC018NE2LS

Overview
OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.
5 V • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC018NE2LS Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V) 25 V 1.
8 mW 100 A 21 nC 39 nC PG-TDSON-8 Type BSC018NE2LS Package PG-TDSON-8 Marking 018NE2LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C I D,pulse I AS E AS V GS V GS=10 V, T A=25 °C, R thJA=50 K/W2) T C=25 °C T C=25 °C I D=50 A, R GS=25 W Value 100 97 100 86 29 400 50 80 ±...


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