PZTA14
Darlington
NPN Silicon Planar Epitaxial
Transistor
P b Lead(Pb)-Free
BASE 1
COLLECTOR 2, 4
3 EMITTER
1.
BASE 2.
COLLECTOR
3.
EMITTER 4.
COLLECTOR
1 2 3
4
SOT-223
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature
Symbol VCEO VCBO VEBO IC(DC)
PD Tj Tstg
Value 30 30 10 300 2
150 -55 to +150
Unit V V V mA W
C C
Device Marking
PZTA14=A14
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC = 1mA , IB=0)
Symbol Min Max Unit
V(BR)CEO
30
-
V
Collector-Base Breakdown Voltage (IC =100µA , IE...