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PZTA14

WEITRON
Part Number PZTA14
Manufacturer WEITRON
Description Darlington NPN Silicon Planar Epitaxial Transistor
Published Dec 11, 2016
Detailed Description PZTA14 Darlington NPN Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free BASE 1 COLLECTOR 2, 4 3 EMITTER 1. BAS...
Datasheet PDF File PZTA14 PDF File

PZTA14
PZTA14

Overview
PZTA14 Darlington NPN Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free BASE 1 COLLECTOR 2, 4 3 EMITTER 1.
BASE 2.
COLLECTOR 3.
EMITTER 4.
COLLECTOR 1 2 3 4 SOT-223 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Value 30 30 10 300 2 150 -55 to +150 Unit V V V mA W C C Device Marking PZTA14=A14 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC = 1mA , IB=0) Symbol Min Max Unit V(BR)CEO 30 - V Collector-Base Breakdown Voltage (IC =100µA , IE=0) V(BR)CBO 30 - V Emitter-Base Breakdown Voltage (IE = 10 µA , IC=0) V(BR)EBO 10 - V Collector-Base Cutoff Current (VCB = 30V) ICBO - 100 nA Emitter-Base Cutoff Current (VEB = 10Vdc , IC=0) IEBO - 100 nA NOTE: 1.
Device mounted on an epoxy printed circuit board 1.
575 inches 1.
575 ...


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