OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Monolithic integrated
Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.
5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
BSZ018NE2LSI
Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V)
25 V
1.
8 mW 40 A
23 nC 36 nC
PG-TSDSON-8 (fused leads)
Type
Package
BSZ018NE2LSI PG-TSDSON-8 (fused leads)
Marking 018NE2I
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=1...