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BSZ018NE2LSI

Infineon
Part Number BSZ018NE2LSI
Manufacturer Infineon
Description Power-Transistor
Published Dec 13, 2016
Detailed Description OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like di...
Datasheet PDF File BSZ018NE2LSI PDF File

BSZ018NE2LSI
BSZ018NE2LSI

Overview
OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.
5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSZ018NE2LSI Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V) 25 V 1.
8 mW 40 A 23 nC 36 nC PG-TSDSON-8 (fused leads) Type Package BSZ018NE2LSI PG-TSDSON-8 (fused leads) Marking 018NE2I Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C 40 A 40 40 V GS=4.
5 V, T C=100 °C 40 V GS=4.
5 V, T A=25 °C, R thJA=60 K/W2) 22 Pulsed drain current3) I D,pulse T C=25 °C 160 Avalanche current, single pulse4) I AS T C=25 °C 20 Avalanche energy, single pulse E AS I D=20 A, ...


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