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IPP12CN10LG

Part Number IPP12CN10LG
Manufacturer Infineon
Description Power-Transistor
Published Dec 16, 2016
Detailed Description OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low...
Datasheet IPP12CN10LG




Overview
OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP12CN10L G IPS12CN10L G IPS12CN10L G IPP12CN10L G 100 V 12 mW 69 A Package PG-TO220-3 PG-TO251-3-11 Marking 12CN10L 12CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=2...






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