DatasheetsPDF.com

IPP12CN10L

Part Number	IPP12CN10L
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPP12CN10L，IIPP12CN10L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·En...
Datasheet	IPP12CN10L PDF File

Overview

isc N-Channel MOSFET Transistor IPP12CN10L，IIPP12CN10L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 69 IDM Drain Current-Single Pulsed 276 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS S...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)