Part Number
|
CJD04N60B |
Manufacturer
|
ZPSEMI |
Description
|
N-Channel Power MOSFET |
Published
|
Dec 19, 2016 |
Detailed Description
|
CJD04N60B
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B 600V N-Channel Power MOSFET
General Description This advanced h...
|
Datasheet
|
CJD04N60B
|
Overview
CJD04N60B
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B 600V N-Channel Power MOSFET
General Description This advanced high voltage MOSFET is designed to wighstand high
energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode wigh fast recovery time.
Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits.
TO-251S
1.
GATE 2.
DRAIN 3.
SOURCE
FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-So...
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