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CJD04N65

ZPSEMI
Part Number CJD04N65
Manufacturer ZPSEMI
Description N-Channel Power MOSFET
Published Dec 19, 2016
Detailed Description CJD04N65 TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high vo...
Datasheet PDF File CJD04N65 PDF File

CJD04N65
CJD04N65

Overview
CJD04N65 TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1.
GATE 2.
DRAIN 3.
SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltag...


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