Part Number
|
CJD04N60B |
Manufacturer
|
JCET |
Description
|
N-Channel MOSFET |
Published
|
Dec 19, 2016 |
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B
V(BR)DSS
600V
600V N-...
|
Datasheet
|
CJD04N60B
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
3.
0Ω@10V
ID
4A
TO-251S
General Description
This advanced high voltage MOSFET is designed to wighstand high
1.
GATE 2.
DRAIN
energy in the avalanche mode and switch efficiently.
This new high energy 3.
SOURCE
device also offers a drain-to-source diode wigh fast recovery time.
Desighed
1 23
for high voltage,high speed switching applications such as power
supplies,converters,power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specificati...
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