OptiMOS™3 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
Type
IPB025N10N3 G
IPB025N10N3 G
Product Summary V DS R DS(on),max ID
100 V 2.
5 mΩ 180 A
Package Marking
PG-TO263-7 025N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2) T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS...