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IPB025N10N3

Infineon
Part Number IPB025N10N3
Manufacturer Infineon
Description MOSFET
Published Oct 2, 2020
Detailed Description OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extreme...
Datasheet PDF File IPB025N10N3 PDF File

IPB025N10N3
IPB025N10N3

Overview
OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type IPB025N10N3 G IPB025N10N3 G Product Summary V DS R DS(on),max ID 100 V 2.
5 mΩ 180 A Package Marking PG-TO263-7 025N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E A...


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