DONGGUAN ZHONGGUI ELECTRONICS CO.
, LTD
TO-3P Plastic-Encapsulate
Transistors
3DA5200A
TRANSISTOR (
NPN)
FEATURES z High Breakdown Voltage z High Current and Power Capacity
TO – 3P
1.
BASE 2.
COLLECTOR 3.
EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 200 200
5 15 3 42 150 -55~+150
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emit...