DatasheetsPDF.com

3DA5200C

Part Number	3DA5200C
Manufacturer	ZHONGGUI ELECTRONICS
Description	NPN Transistor
Published	Dec 24, 2016
Detailed Description	DONGGUAN ZHONGGUI ELECTRONICS CO., LTD TO-3P Plastic-Encapsulate Transistors 3DA5200C TRANSISTOR (NPN) FEATURES z High ...
Datasheet	3DA5200C PDF File

Overview

DONGGUAN ZHONGGUI ELECTRONICS CO.
, LTD TO-3P Plastic-Encapsulate Transistors 3DA5200C TRANSISTOR (NPN) FEATURES z High Breakdown Voltage z High Current and Power Capacity TO – 3P 1.
BASE 2.
COLLECTOR 3.
EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 120 5 15 3 42 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emit...

Similar Datasheet

3DA5200A TO-3P Plastic-Encapsulate Transistors - TY Semiconductor
3DA5200A NPN Transistor - ZHONGGUI ELECTRONICS
3DA5200B TO-3P Plastic-Encapsulate Transistors - TY Semiconductor
3DA5200B NPN Transistor - JCET
3DA5200C TO-3P Plastic-Encapsulate Transistors - TY Semiconductor
3DA5200C NPN Transistor - ZHONGGUI ELECTRONICS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)