|
Part Number
|
CJP04N60 |
|
Manufacturer
|
JCET |
|
Description
|
N-Channel MOSFET |
|
Published
|
Dec 26, 2016 |
|
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP04N60
V(BR)DSS
600V
600V N...
|
|
Datasheet
|
CJP04N60
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP04N60
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
3Ω@10V
ID
4A
TO-220-3L
General Description This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode wigh fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
1.
GATE 2.
DRAIN 3.
SOURCE
FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z...
Similar Datasheet