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CJP04N65

JCET
Part Number CJP04N65
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 26, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N65 V(BR)DSS 650V N-Chan...
Datasheet PDF File CJP04N65 PDF File

CJP04N65
CJP04N65

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   3Ω@10V ID 4A TO-220-3L   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
1.
GATE 2.
DRAIN 3.
SOURCE 123 FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche...


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