Part Number
|
CJP50N06 |
Manufacturer
|
JCET |
Description
|
N-Channel MOSFET |
Published
|
Dec 26, 2016 |
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP50N06
V(BR)DSS
60V
N-Cha...
|
Datasheet
|
CJP50N06
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP50N06
V(BR)DSS
60V
N-Channel Power MOSFET
RDS(on)MAX
20mΩ@10V
ID
50A
TO-220-3L-C
GENERAL DESCRIPTION
The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability
APPLICATION z Power switching application z Hard switched and high frequency circuits z...
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