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CJP50N06

JCET
Part Number CJP50N06
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 26, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP50N06 V(BR)DSS 60V N-Cha...
Datasheet PDF File CJP50N06 PDF File

CJP50N06
CJP50N06

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP50N06 V(BR)DSS 60V N-Channel Power MOSFET RDS(on)MAX   20mΩ@10V ID 50A TO-220-3L-C   GENERAL DESCRIPTION The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATION z Power switching application z Hard switched and high frequency circuits z...


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