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Part Number
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CJPF08N60 |
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Manufacturer
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JCET |
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Description
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N-Channel MOSFET |
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Published
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Dec 26, 2016 |
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Detailed Description
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF08N60
V(BR)DSS
600V
N-Chann...
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Datasheet
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CJPF08N60
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Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF08N60
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
1.
3Ω@10V
ID
8A
TO-220F
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls and bridge circuits.
1.
GATE 2.
DRAIN 3.
SOURCE
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energ...
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