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CJPF08N65

JCET
Part Number CJPF08N65
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 26, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF08N65 N-Channel Power MOSFET...
Datasheet PDF File CJPF08N65 PDF File

CJPF08N65
CJPF08N65

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220F Plastic-Encapsulate MOSFETS CJPF08N65 N-Channel Power MOSFET V(BR)DSS 650V RDS(on)MAX   1.
4Ω@10V ID 8A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE  High Current Rating  Lower RDS(on)  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche Energy Specified TO-220F   1.
GATE 2.
DRAIN 3.
SOURCE 123 MARKING EQUIVALENT CIRCUIT CJPF08N65 XXX CJPF08N65= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous D...


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