STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.
0A
DESCRIPTION
STN8205AA is the dual N-Channel enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSSOP-8
D2 S2 S2 G2 87 6 5
STN8205AA SYA
FEATURE
z 20V/6.
0A, R =DS(ON) 30m-ohm@VGS =4.
5V z 20V/5.
0A, RDS(ON) =42m-ohm@VGS =2.
5V z Super high density cell design for extremely
low RDS(ON) z Exception...