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STN8205A

STANSON
Part Number STN8205A
Manufacturer STANSON
Description Dual N-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description STN8205A Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205A is the dual N-Channel enhancement mode powe...
Datasheet PDF File STN8205A PDF File

STN8205A
STN8205A


Overview
STN8205A Dual N Channel Enhancement Mode MOSFET 5.
0A DESCRIPTION STN8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSSOP-8 D2 S2 S2 G2 FEATURE l 20V/5.
0A, RDS(ON) = 21m-ohm (Typ.
) @VGS =4.
5V l 20V/3.
0A, RDS(ON) =27m-ohm @VGS =2.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional low on-resistance and maximum DC current capability l TSSOP-8 package design D1 S1 S1 G1 Y: Year Code A: Date Code B: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STN8205A 2007.
V1 STN8205A Dual N Channel Enhancement Mode MOSFET 5.
0A ABSOULTE M...


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