Part Number
|
STGD6M65DF2 |
Manufacturer
|
STMicroelectronics |
Description
|
IGBT |
Published
|
Jan 7, 2017 |
Detailed Description
|
STGD6M65DF2
Datasheet
Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package
TAB 23 1
DPAK C(2, T...
|
Datasheet
|
STGD6M65DF2
|
Overview
STGD6M65DF2
Datasheet
Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package
TAB 23 1
DPAK C(2, TAB)
G(1)
E(3)
NG1E3C2T
Product status link STGD6M65DF2
Features
• Maximum junction temperature: TJ = 175 °C
• 6 μs of minimum short-circuit withstand time
•
VCE(sat) = 1.
55 V (typ.
) @ IC = 6 A
• Tight parameter distribution
• Safer paralleling
•
Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft and very fast-recovery antiparallel diode
Applications
• Industrial motor control • PFC converters, single phase input • Uninterruptable power supplies (UPS)
Description
This device is an IGBT developed using an advanced proprietary trench ga...
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