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STGD6M65DF2

STMicroelectronics
Part Number STGD6M65DF2
Manufacturer STMicroelectronics
Description IGBT
Published Jan 7, 2017
Detailed Description STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, T...
Datasheet PDF File STGD6M65DF2 PDF File

STGD6M65DF2
STGD6M65DF2

Overview
STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Product status link STGD6M65DF2 Features • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.
55 V (typ.
) @ IC = 6 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast-recovery antiparallel diode Applications • Industrial motor control • PFC converters, single phase input • Uninterruptable power supplies (UPS) Description This device is an IGBT developed using an advanced proprietary trench ga...


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