FDS86106

FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description „ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A „ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widel...