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FDS86141

ON Semiconductor
Part Number FDS86141
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description FDS86141 N-Channel Power Trench® MOSFET www.onsemi.com FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 mΩ Feat...
Datasheet PDF File FDS86141 PDF File

FDS86141
FDS86141


Overview
FDS86141 N-Channel Power Trench® MOSFET www.
onsemi.
com FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.
5 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Applications „ DC-DC Conversion D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1b) Ratings 100 ±20 7 30 121 2.
5 1.
0 -55 to +150 Units V V A mJ W °C RθJA Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 50 °C/W Device Marking FDS86141 Device FDS86141 Package SO-8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units Semiconductor Components Industries, LLC, 2017 January, 2017, Rev.
1.
8 1 Publication Order Number: FDS86141 FDS86141 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V 100 V ID = 250 μA, referenced to 25 °C 67 mV/°C VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 1 μA ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2 ...


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