Part Number
|
FDMC510P |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 10, 2017 |
Detailed Description
|
FDMC510P P-Channel PowerTrench® MOSFET
FDMC510P
P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.0 mΩ
Features
Max rDS(o...
|
Datasheet
|
FDMC510P
|
Overview
FDMC510P P-Channel PowerTrench® MOSFET
FDMC510P
P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.
0 mΩ
Features
Max rDS(on) = 8.
0 mΩ at VGS = -4.
5 V, ID = -12 A Max rDS(on) = 9.
8 mΩ at VGS = -2.
5 V, ID = -10 A Max rDS(on) = 13 mΩ at VGS = -1.
8 V, ID = -9.
3 A Max rDS(on) = 17 mΩ at VGS = -1.
5 V, ID = -8.
3 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
HBM ESD capability level 2 KV typical (Note 4)
June 2014
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® proces...
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