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FDMC510P

ON Semiconductor
Part Number FDMC510P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 19, 2023
Detailed Description MOSFET – P-Channel, POWERTRENCH) -20 V, -18 A, 8.0 mW FDMC510P General Description This P−Channel MOSFET is produce usin...
Datasheet PDF File FDMC510P PDF File

FDMC510P
FDMC510P

Overview
MOSFET – P-Channel, POWERTRENCH) -20 V, -18 A, 8.
0 mW FDMC510P General Description This P−Channel MOSFET is produce using onsemi’s advanced POWERTRENCH® process that has been optimized for rDS(ON), switching performance and ruggedness.
Features • Max rDS(on) = 8.
0 mW at VGS = −4.
5 V, ID = −12 A • Max rDS(on) = 9.
8 mW at VGS = −2.
5 V, ID = −10 A • Max rDS(on) = 13 mW at VGS = −1.
8 V, ID = −9.
3 A • Max rDS(on) = 17 mW at VGS = −1.
5 V, ID = −8.
3 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • 100% UIL Tested • HBM ESD Capability Level >2 kV Typical (Note 4) • This Device is Pb−Free, Halide Fre...


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