MOSFET
FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.8 mΩ at VGS ...
Fairchild Semiconductor