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FDMS3606AS

Fairchild Semiconductor
Part Number FDMS3606AS
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel...
Datasheet PDF File FDMS3606AS PDF File

FDMS3606AS
FDMS3606AS

Overview
FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.
5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.
9 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.
8 mΩ at VGS = 4.
5 V, ID = 23 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCOR...


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