FDMS3600AS PowerTrench® Power Stage FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.
6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.
5 mΩ at VGS = 4.
5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.
6 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.
4 mΩ at VGS = 4.
5 V, ID = 25 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant April 2011 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally conne...

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