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FDMS3600S

Fairchild Semiconductor
Part Number FDMS3600S
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDMS3600S PowerTrench® Power Stage FDMS3600S PowerTrench® Power Stage August 2011 25 V Asymmetric Dual N-Channel MOSF...
Datasheet PDF File FDMS3600S PDF File

FDMS3600S
FDMS3600S

Overview
FDMS3600S PowerTrench® Power Stage FDMS3600S PowerTrench® Power Stage August 2011 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 5.
6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.
1 mΩ at VGS = 4.
5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.
6 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.
4 mΩ at VGS = 4.
5 V, ID = 25 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications „ Computing „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant „ Communications „ General Purpose Point of Load „ Notebook VCOR...


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