Part Number
|
FCH76N60N |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 16, 2017 |
Detailed Description
|
FCH76N60N — N-Channel SupreMOS® MOSFET
FCH76N60N
N-Channel SupreMOS® MOSFET
600 V, 76 A, 36 mΩ
November 2013
Features...
|
Datasheet
|
FCH76N60N
|
Overview
FCH76N60N — N-Channel SupreMOS® MOSFET
FCH76N60N
N-Channel SupreMOS® MOSFET
600 V, 76 A, 36 mΩ
November 2013
Features
• RDS(on) = 28 mΩ (Typ.
) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ.
Qg = 218 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 914 pF) • 100% Avalanche Tested • RoHS Compliant
Application
• Solar Inverter • AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching perf...
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