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FCH76N60N

Fairchild Semiconductor
Part Number FCH76N60N
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 16, 2017
Detailed Description FCH76N60N — N-Channel SupreMOS® MOSFET FCH76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ November 2013 Features...
Datasheet PDF File FCH76N60N PDF File

FCH76N60N
FCH76N60N

Overview
FCH76N60N — N-Channel SupreMOS® MOSFET FCH76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ November 2013 Features • RDS(on) = 28 mΩ (Typ.
) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ.
Qg = 218 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D G D S TO-247 G S MOSFET Maximum Ratings TC = 25oC unless otherwise...


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