Part Number
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TC554161AFTI-85 |
Manufacturer
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Toshiba Semiconductor |
Description
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STATIC RAM |
Published
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Jan 19, 2017 |
Detailed Description
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TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT...
|
Datasheet
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TC554161AFTI-85
|
Overview
TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns.
It is automatically placed in low-power mode at 2 mA standby current (typ) when chip enable ( CE ) is asserted high.
There are two control inputs.
CE is used to select the device ...
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