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TC554161AFTI-10L

Toshiba Semiconductor
Part Number TC554161AFTI-10L
Manufacturer Toshiba Semiconductor
Description STATIC RAM
Published Jan 19, 2017
Detailed Description TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT...
Datasheet PDF File TC554161AFTI-10L PDF File

TC554161AFTI-10L
TC554161AFTI-10L

Overview
TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns.
It is automatically placed in low-power mode at 2 mA standby current (typ) when chip enable ( CE ) is asserted high.
There are two control inputs.
CE is used to select the device and for data retention control, and output enable ( OE ) provides fast memory access.
Data byte control pin ( LB , UB ) provides lower and upper byte access.
This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required.
And, wi...


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